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| RB081L-20 Diodes Schottky barrier diode RB081L-20 Applications High frequency rectification For switching power supply External dimensions (Units : mm) Features 1) Compact power mold type. (PMDS) 2) Ultra low VF.( VF=0.27V Typ. at 1A ) 3) IO=5A guaranteed despite the size. 1.50.2 CATHODE MARK 4.50.2 1.20.3 3 9 0.1 +0.02 -0.1 2.00.2 Construction Silicon epitaxial planar 2.60.2 ROHM : PMDS EIAJ : - JEDEC : SOD-106 Date of manufacture EX. 1999.12 9,C Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Symbol VRM VR IO1 1 IO2 2 IFSM Tj Tstg Limits 25 20 5 4 70 125 -40+125 Unit V V A A A C C Peak forward surge current (60Hz 1 ) Junction temperature Storage temperature 1 When mounted on an alumina substrates (82x30x1.0mm), Tc Max.=90C 2 When mounted on an alumina substrates (82x30x1.0mm), Ta=25C Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Typ. - - Max. 0.45 0.7 Unit V mA Conditions IF=5.0A VR=20V 5.00.3 RB081L-20 Diodes Electrical characteristics curves (Ta=25C) 10A 1 Ta=125C 100m 10m 1m 100 10 1 CAPACITANCE BETWEEN TERMINALS : CT (pF) 1n FORWARD CURRENT : IF (A) Ta =1 75 25 C C 1A REVERSE CURRENT : IR (A) 100m 75C 25 C C 10m 1m -2 5 25C 100 -25C 0 10 20 30 40 50 100 0 0.1 0.2 0.3 0.4 0.5 0.6 10 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics AVERAGE RECTIFIED FOWARD CURRENT : Io (A) AVERAGE RECTIFIED FOWARD CURRENT : Io (A) 7.0 DC 6.0 D=0.8 5.0 4.0 D=0.5 sine wave 3.0 D=0.3 D=0.2 2.0 D=0.1 D=0.05 1.0 0.0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) 8.0 7.0 6.0 5.0 4.0 3.0 DC D=0.8 D=0.5 sine wave D=0.3 D=0.2 D=0.1 2.0 D=0.05 1.0 0.0 0 25 50 75 100 125 CASE TEMPERATURE : Tc (C) Fig.4 Derating curve (lo-Ta) Fig.5 Derating curve (lo-Tc) |
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